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Working principle of slow wire processing

 Slow wire walking, also called low-speed wire walking, is a kind of CNC machining machine tool that uses continuously moving fine metal wire as an electrode to pulse spark discharge on the workpiece to generate a high temperature of over 6000 degrees, ablate metal and cut into a workpiece. The principle of wire processing is the phenomenon that there is a gap between the wire electrode and the workpiece, and the metal is removed by continuous discharge. Since the slow-moving wire cutting machine adopts the method of wire electrode continuous feeding, that is, the wire electrode is processed during the movement, so even if the wire electrode is worn out, it can be continuously supplemented, so it can improve the machining accuracy of the parts and slow the wire. The surface roughness of the workpiece processed by the cutting machine can usually reach Ra=0.8μm and above, and the roundness error, linear error and dimensional error of the slow-moving wire cutting machine are much better t

Hydrostatic guideway of CNC machining lathe

The static pressure slide rail (TTW guide) of the CNC machining lathe transfers the oil with a certain pressure through the throttle to the oil cavity between the sliding surfaces of the slide rail (TTW guide) to form a pressure oil film to float the moving parts , Make the sliding rail (TTW guide) surface in a pure liquid friction state.   CNC machining General CNC machining usually refers to computer digital control precision machining, CNC machining lathe, CNC machining milling machine, CNC machining c17200   beryllium   copper   and milling machine, etc. The feed route of finishing is basically carried out along the part contour sequence. Therefore, the focus of determining the feed route is to determine the feed route of rough machining and idle stroke. In the numerical control processing, the control system issues instructions to make the tool perform various motions that meet the requirements, and the shape and size of the workpiece are expressed in the form of numbers and lette

Introduction of KOVAR parts

KOVAR parts are commonly used as metal casing materials in the electronic packaging industry. Because they have a linear expansion coefficient close to that of molybdenum group glass, and can produce less sealing stress during the sealing (melting) process with molybdenum group glass, so To obtain good air-tightness, in order to make the metal tube and shell to achieve air-tight sealing, in the entire sealing process, the annealing process undoubtedly plays an important role as a link between the previous and the next. The internal stress generated during KOVAR  machining also prepares the material structure for the implementation of the subsequent process-the sealing process of the metal parts. The main purpose of annealing Kovar shell before sealing is to: (1) Eliminate machining stress. When Kovar undergoes plastic machining deformation during cold working, about 10% to 15% of the applied energy is converted into internal energy, which is commonly referred to as internal stress,

NXP BLF7G22L-130N

NXP BLF7G22L-130N
#BLF7G22L-130N NXP BLF7G22L-130N New 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz., BLF7G22L-130N pictures, BLF7G22L-130N price, #BLF7G22L-130N supplier
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1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits „ Excellent ruggedness „ High efficiency „ Low Rth providing excellent thermal stability „ Designed for broadband operation (2000 MHz to 2200 MHz) „ Lower output capacitance for improved performance in Doherty applications „ Designed for low memory effects providing excellent digital pre-distortion capability „ Internally matched for ease of use „ Integrated ESD protection „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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